Manufacturer:

Infineon

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-252-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

161 A

Rds On - Drain-Source Resistance:

3.3 mOhms

Vgs th - Gate-Source Threshold Voltage:

2.3 V

Qg - Gate Charge:

50 nC

Maximum Operating Temperature:

+ 175 C

Packaging:

Reel

Brand:

Infineon / IR

Configuration:

Single

Fall Time:

19 ns

Forward Transconductance - Min:

37 S

Height:

2.3 mm

Length:

6.5 mm

Pd - Power Dissipation:

140 W

Rise Time:

42 ns

Transistor Type:

1 N-Channel

Width:

6.22 mm

Unit Weight:

0.139332 oz