Manufacturer

Infineon Technologies

Series

HEXFET®

Packaging

Cut Tape (CT) 

Part Status

Active

FET Type

MOSFET P-Channel, Metal Oxide

FET Feature

Logic Level Gate, 1.8V Drive

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

4.3A (Ta)

Rds On (Max) @ Id, Vgs

50 mOhm @ 4.3A, 4.5V

Vgs(th) (Max) @ Id

950mV @ 250µA

Gate Charge (Qg) @ Vgs

15nC @ 5V

Input Capacitance (Ciss) @ Vds

830pF @ 10V

Power - Max

1.3W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

Micro3™/SOT-23