Manufacturer |
Infineon Technologies |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
55V |
Current - Continuous Drain (Id) @ 25°C |
30A (Tc) |
Vgs(th) (Max) @ Id |
4V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs |
32nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
901pF @ 25V |
FET Feature |
- |
Power Dissipation (Max) |
100W (Tc) |
Rds On (Max) @ Id, Vgs |
23 mOhm @ 21A, 10V |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
PG-TO252-3 |