
|
Manufacturer |
Infineon Technologies |
|
FET Type |
N-Channel |
|
Technology |
MOSFET (Metal Oxide) |
|
Drain to Source Voltage (Vdss) |
55V |
|
Current - Continuous Drain (Id) @ 25°C |
30A (Tc) |
|
Vgs(th) (Max) @ Id |
4V @ 50µA |
|
Gate Charge (Qg) (Max) @ Vgs |
32nC @ 10V |
|
Input Capacitance (Ciss) (Max) @ Vds |
901pF @ 25V |
|
FET Feature |
- |
|
Power Dissipation (Max) |
100W (Tc) |
|
Rds On (Max) @ Id, Vgs |
23 mOhm @ 21A, 10V |
|
Operating Temperature |
-55°C ~ 175°C (TJ) |
|
Mounting Type |
Surface Mount |
|
Supplier Device Package |
PG-TO252-3 |