Product Category: |
MOSFET |
Manufacturer: |
Fairchild Semiconductor |
Technology: |
Si |
Mounting Style: |
Through Hole |
Package / Case: |
TO-220-3 |
Number of Channels: |
1 Channel |
Transistor Polarity: |
N-Channel |
Vds - Drain-Source Breakdown Voltage: |
600 V |
Id - Continuous Drain Current: |
12 A |
Rds On - Drain-Source Resistance: |
650 mOhms |
Vgs - Gate-Source Voltage: |
30 V |
Minimum Operating Temperature: |
- 55 C |
Maximum Operating Temperature: |
+ 150 C |
Packaging: |
Tube |
Channel Mode: |
Enhancement |
Brand: |
Fairchild Semiconductor |
Configuration: |
Single |
Fall Time: |
90 ns |
Forward Transconductance - Min: |
13 S |
Height: |
16.3 mm |
Length: |
10.67 mm |
Pd - Power Dissipation: |
51 W |
Rise Time: |
85 ns |
Transistor Type: |
1 N-Channel |
Type: |
MOSFET |
Typical Turn-Off Delay Time: |
155 ns |
Typical Turn-On Delay Time: |
30 ns |