FEATURES

• Low gate charge

QG = 26 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)

• Gate voltage rating ±30 V
• Low on-state resistance

RDS(on) = 1.2 W MAX. (VGS = 10 V, ID = 3.0 A)

• Avalanche capability ratings

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V) VDSS 600 V

Gate to Source Voltage (VDS = 0 V) VGSS ±30 V

Drain Current (DC) (TC = 25°C) ID(DC) ±6.0 A

Drain Current (pulse) Note1 ID(pulse) ±24 A

Total Power Dissipation (TA = 25°C) PT1 2.0 W

Total Power Dissipation (TC = 25°C) PT2 35 W

Channel Temperature Tch 150 °C

Storage Temperature Tstg -55 to +150 °C

Single Avalanche Current Note2 IAS 6.0 A

Single Avalanche Energy Note2 EAS 24 mJ

Notes 1. PW £ 10 ms, Duty Cycle £ 1%

2. Starting Tch = 25°C, VDD = 150 V, RG = 25 W, VGS = 20 ® 0 V